PART |
Description |
Maker |
5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 59 |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped. 128K x 32 SRAM. 15ns access time. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish gold.
|
Aeroflex Circuit Technology
|
WF128K32N-120H1I5A WF128K32N-150H1I5 WF128K32N-50H |
120ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 150ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 60ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 70ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 90ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
|
White Electronic Designs
|
WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 x8 SRAM x8的SRAM 25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
|
White Electronic Designs Microchip Technology, Inc. Sharp, Corp. Electronic Theatre Controls, Inc. Raltron Electronics, Corp.
|
AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85 Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125 Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ... Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 |
70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 128K X 8 STATIC RAM CMOS MONOLITHIC CAPACITOR 150UF 200V ELECT TSHA 128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM,贴962-89598 CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 1200UF 200V ELECT TSHA 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs N.A. ETC[ETC] Electronic Theatre Controls, Inc.
|
IS61LV12816 IS61LV12816-10B IS61LV12816-10BI IS61L |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PBGA48 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PDSO44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PDSO44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PBGA48 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution Inc] Integrated Circuit Solution Inc ISSI[Integrated Silicon Solution, Inc]
|
K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 CONNECTOR ACCESSORY POT 100K OHM THUMBWHEEL CERM ST
|
http:// NXP Semiconductors N.V. Maxwell Technologies, Inc
|
CY7C1019CV33 CY7C1019CV33-12VI CY7C1019CV33-15VC C |
128K x 8 Static RAM 128K的8静态RAM JT 26C 26#20 SKT RECP 128K X 8 STANDARD SRAM, 8 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32 Memory : Async SRAMs
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 512Kx8 Monolithic SRAM SMD 5962-95600 512Kx8 Monolithic SRAM, SMD 5962-95600 SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
|
White Electronic Designs ETC[ETC] Electronic Theatre Controls, Inc.
|